Surprising semiconductor properties revealed with innovative new method

Journal Reference: S. A. Chambers, M. Chrysler, J. H. Ngai, T.-L. Lee, J. Gabel, B. E. Matthews, S. R. Spurgeon, M. E. Bowden, Z. Zhu, P. V. Sushko. Mapping hidden space-charge distributions across crystalline metal oxide/group IV semiconductor interfaces. Physical Review Materials, 2022; 6 (1) DOI: 10.1103/PhysRevMaterials.6.015002 Scott Chambers, a materials scientist at the Department … Read more

3D semiconductor particles offer 2D properties

Journal Reference: Xianwen Mao, Peng Chen. Inter-facet junction effects on particulate photoelectrodes. Nature Materials, 2021; DOI: 10.1038/s41563-021-01161-6 Three-dimensional semiconductor particles have an edge, too — many of them — given their geometrically varied surfaces. Cornell researchers have discovered that the junctures at these facet edges have 2D properties, which can be leveraged for photoelectrochemical processes … Read more

Novel semiconductor gives new perspective on anomalous Hall effect

Journal Reference: Masaki Uchida, Shin Sato, Hiroaki Ishizuka, Ryosuke Kurihara, Taro Nakajima, Yusuke Nakazawa, Mizuki Ohno, Markus Kriener, Atsushi Miyake, Kazuki Ohishi, Toshiaki Morikawa, Mohammad Saeed Bahramy, Taka-hisa Arima, Masashi Tokunaga, Naoto Nagaosa, Masashi Kawasaki. Above-ordering-temperature large anomalous Hall effect in a triangular-lattice magnetic semiconductor. Science Advances, 2021; 7 (52) DOI: 10.1126/sciadv.abl5381 Charged particles such … Read more