New transistor could cut 5% from world’s digital energy budget

Journal Reference: Keke He, Bilal Barut, Shenchu Yin, Michael D. Randle, Ripudaman Dixit, Nargess Arabchigavkani, Jubin Nathawat, Ather Mahmood, Will Echtenkamp, Christian Binek, Peter A. Dowben, Jonathan P. Bird. Graphene on Chromia: A System for Beyond‐Room‐Temperature Spintronics. Advanced Materials, 2022; 34 (12): 2105023 DOI: 10.1002/adma.202105023 Following years of innovations from the University of Nebraska-Lincoln’s Christian … Read more

Development of a diamond transistor with high hole mobility

Journal Reference: Yosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, Yamaguchi Takahide. High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures. Nature Electronics, 2021; 5 (1): 37 DOI: 10.1038/s41928-021-00689-4 Diamond has excellent wide bandgap semiconductor properties: its bandgap is larger than those of silicon carbide and gallium nitride, which … Read more

The first topological acoustic transistor

Journal Reference: Harris Pirie, Shuvom Sadhuka, Jennifer Wang, Radu Andrei, Jennifer E. Hoffman. Topological Phononic Logic. Physical Review Letters, 2022; 128 (1) DOI: 10.1103/PhysRevLett.128.015501 Now, Harvard University researchers have designed and simulated the first topological acoustic transistors — with sound waves instead of electrons — and proposed a connection architecture to form a universal logic … Read more

Researchers use electron microscope to turn nanotube into tiny transistor

Journal Reference: Dai-Ming Tang, Sergey V. Erohin, Dmitry G. Kvashnin, Victor A. Demin, Ovidiu Cretu, Song Jiang, Lili Zhang, Peng-Xiang Hou, Guohai Chen, Don N. Futaba, Yongjia Zheng, Rong Xiang, Xin Zhou, Feng-Chun Hsia, Naoyuki Kawamoto, Masanori Mitome, Yoshihiro Nemoto, Fumihiko Uesugi, Masaki Takeguchi, Shigeo Maruyama, Hui-Ming Cheng, Yoshio Bando, Chang Liu, Pavel B. Sorokin, … Read more

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